TO220-2
IDH08G65C6XKSA1
The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F ).
Brand
Infineon
Package
TO220-2
Lead Time
In stock
Date Code
26+
IDH08G65C6XKSA1 Parameters
| Package | TO220-2 |
|---|---|
| Brand | Infineon |
| Date Code | 26+ |
| 二极管配置 | 独立式 |
| 正向压降(Vf) | 1.25V@8A |
| 反向电流(Ir) | 800nA@420V |
| Category | Silicon CarbideDiodes |
|---|---|
| Stock | 466 |
| MOQ / SPQ | 1 / 1 |
| 整流电流 | 20A |
| 直流反向耐压(Vr) | 650V |
IDH08G65C6XKSA1 Overview
The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F ).