DMN3730UFB-7
Self-operatedAvailable
IC
X1-DFN1006-3
DMN3730UFB-7
DMN3730UFB-7 is a DIODES MOSFETs(MOSFET) in X1-DFN1006-3 package.
Brand
DIODES
Package
X1-DFN1006-3
Lead Time
In stock
Date Code
Within 2 years
DMN3730UFB-7 Parameters
| Package | X1-DFN1006-3 |
|---|---|
| Brand | DIODES |
| Date Code | Within 2 years |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 730mΩ@1.8V |
| 阈值电压(Vgs(th)) | 950mV |
| 输入电容(Ciss) | 64.3pF |
| Operating Temperature | -55℃~+150℃ |
| OutputCapacitors(Coss) | 6.1pF |
| Product Name | 1个N沟道 耐压:30V 电流:0.91A |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 12,001 |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 30V |
| 耗散功率(Pd) | 690mW |
| 栅极电荷量(Qg) | 1.6nC@4.5V |
| 反向传输电容(Crss) | 4.5pF |
| 类型 | N沟道 |
| 栅极电压(Vgs) | ±8V |
| Part Number | DMN3730UFB-7 |
| Unit | pcs |
| Product Weight | 7.7e-05 |
DMN3730UFB-7 Overview
场效应管(MOSFET) 470mW 30V 750mA 1个N沟道
DMN3730UFB-7 Features
- 0.5mm超薄封装, 适用于轻薄应用
- 0.6mm2封装尺寸, 比SOT23小10倍
- 低VGS(th), 可直接由电池驱动
- 低RDS(on)
- 完全无铅, 完全符合RoHS标准
- 无卤素和锑, “绿色”器件
- 栅极ESD保护2kV
- 通过AEC-Q101标准认证, 具备高可靠性
DMN3730UFB-7 Applications
- 负载开关-便携式应用-电源管理功能