Power ElectronicsSemiconductor Today
InGaN amber nano-LED with 10% external quantum efficiency
Publisher: Semiconductor TodayPublished: October 13, 2026 at 05:31 PM
Article Summary
Researchers based in China and Malaysia report conventional nano-scale amber light-emitting diodes (LEDs) based on indium gallium nitride (InGaN) with 10% peak external quantum efficiency (EQE)...
Power Electronics
Article summaries are provided for reference. Please follow the publisher link for the complete article and applicable rights.
View Original Article